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JY16M N Channel Enhancement Mode Power MOSFET For Power Switching Application

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JY16M N Channel Enhancement Mode Power MOSFET For Power Switching Application

Brand Name : JUYI

Model Number : JY16M

Certification : ISO9001,CE

Place of Origin : China

MOQ : 50pcs ( sample available)

Price : USD0.5-USD1/PC

Payment Terms : T/T, , Western Union, Paypal

Supply Ability : 10000pcs per month

Delivery Time : depend on the order quantity /Negotiable

Packaging Details : Suite for export

Name : Power MOSFET

Model No. : JY16M

Type : N Channel

Drain-Source Voltage : 600V

Gate-Source Voltage : ±30V

Continuous Drain Current : 4A (Ta=25℃）

Pulsed Drain Current : 16A

Maximum Power Dissispation : 33W

Color : Black

Shap : Square

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General Description:

The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Features:

● 600V/4A, RDS(ON) =2.6Ω@VGS=10V
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation

Application:

● Lighting
● High efficiency switch mode power suplies

PIN Description:

JY16M N Channel Enhancement Mode Power MOSFET For Power Switching Application

Absolute Maximum Ratings(Ta=25℃ Unless Otherwise Noted):

Symbol Parameter Rating Unit
VDS Drain-Source Voltage 600 V
VGS Gate-Source Voltage ±30 V
ID Continuous Drain Current Tc=25℃ 4 A
Tc=100℃ 2.9
IDM Pulsed Drain Current 16 A
PD Maximum Power Dissipation 33 W
TJTSTG Operating Junction and Storage Temperature Range -55~+150 ℃
RΘJC Thermal Resistance-Junction to Case 1.56 ℃/W
RΘJA Thermal Resistance-Junction to Ambient 62 ℃/W

TO220F-3 Package Outline:

JY16M N Channel Enhancement Mode Power MOSFET For Power Switching Application

SYMBOL MM INCH SYMBOL MM INCH
MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX
A 4.40 4.57 4.70 0.173 0.180 0.185 Øp1 1.40 1.50 1.60 0.055 0.059 0.063
A1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54BSC 0.1BSC
A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08BSC 0.2BSC
b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260
b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519
C 0.48 0.50 0.52 0.019 0.020 0.021 L1 - - 3.95 - - 0.156
D 15.40 15.60 15.80 0.606 0.614 0.622 L2 250REF. 0.098REF.
D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143
DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113
E 9.70 9.90 10.10 0.382 0.389 0.398 Θ1 5° 7° 9° 5° 7° 9°
E1 - 8.70 - - 0.343 - Θ2 1° 3° 5° 1° 3° 5°
E2 9.80 10.00 10.20 0.386 0.394 0.401
More information please directly contact with us via email: ivanzhu@junqitrading.com

Product Tags:

JY16M mosfet enhancement mode

      

N Channel mosfet enhancement mode

      

Power Switching mosfet enhancement mode

      
Quality JY16M N Channel Enhancement Mode Power MOSFET For Power Switching Application for sale

JY16M N Channel Enhancement Mode Power MOSFET For Power Switching Application Images

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