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N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube

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N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube

Brand Name : juyi

Model Number : JY8N5M

Certification : ISO9001,CE

Place of Origin : China

MOQ : 50pcs ( sample available)

Price : USD0.5-USD1/PC

Payment Terms : T/T, , Western Union, Paypal

Supply Ability : 10000pcs per month

Delivery Time : depend on the order quantity /Negotiable

Packaging Details : Suite for export

Name : N Channel Enhancement Mode Power MOSFET

Model No. : JY8N5M

Type : N Channel

Drain-Source Voltage : 500V

Gate-Source Voltage : ±30V

Continous Drain Current : 8A (Tc=25℃）

Pulsed Drain Current : 30A

Maximum Power Dissipation : 80W

Color : Black

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General Description:

The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.

Features:

● 500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)
●Fast switching and reverse body recovery
● Excellent package for good heat dissipation

Applications:

● Lighting
● High efficiency switch mode power supplies

PIN Description:

N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube

Absolute Maximum Ratings(Tc=25℃ Unless Otherwise Noted):

Symbol Parameter Rating Unit
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±30 V
ID Continuous Drain Current Tc=25℃ 8 A
Tc=100℃ 4.8
IDM Pulsed Drain Current 30 A
PD Maximum Power Dissipation 80 W
TJTSTG Operating Junction and Storage Temperature Range -55~+150 ℃
RΘJC Thermal Resistance-Junction to Case 1.56 ℃/W

TO-252 Package Outline:

N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube

Symbol Dimensions in Millimeters Dimensions in inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 0.483TYP. 0.190 TYP.
E 6.000 6.2000 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 TYP 0.114 TYP.
L2 1.400 1.700 0.055 0.067
L3 1.600 TYP 0.063 TYP.
L4 0.600 1.000 0.024 0.039
ø 1.100 1.300 0.043 0.051
Θ 0° 8° 0° 8°
h 0.000 0.300 0.000 0.012
v 5.350 TYP. 0.211 TYP.


For More products information, please directly contact with us via email: ivanzhu@junqitrading.com


Product Tags:

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N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube Images

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